r07ds0533ej0100 rev.1.00 page 1 of 3 sep 02, 2011 preliminary datasheet RJH60M3DPE 600 v - 17 a - igbt application: inverter features ? short circuit withstand time (8 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.8 v typ. (at i c = 17 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode (100 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 80 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 17 a, rg = 5 ? , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r renesas package code: prss0004ae-b (package name: ldpak (s)-(1) ) 1 2 3 4 c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v tc = 25c i c 35 a collector peak current tc = 100c i c 17 a collector peak current ic(peak) note1 70 a collector to emitter diode forward current i df 17 a collector to emitter diode forward peak current i df (peak) note1 70 a collector dissipation p c note2 113 w junction to case the rmal resistance (igbt) ? j-c note2 1.11 c/ w junction to case thermal resistance (diode) ? j-cd note2 4.2 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ? c r07ds0533ej0100 rev.1.00 sep 02, 2011
RJH60M3DPE preliminary r07ds0533ej0100 rev.1.00 page 2 of 3 sep 02, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces / i r ? ? 5 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 5 ? 7 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.8 2.3 v i c = 17 a, v ge = 15 v note3 collector to emitte r saturation voltage v ce(sat) ? 2.2 ? v i c = 35 a, v ge = 15 v note3 input capacitance cies ? 900 ? pf output capacitance coes ? 60 ? pf reverse transfer capacitance cres ? 30 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 36 ? nc gate to emitter charge qge ? 6 ? nc gate to collector charge qgc ? 16 ? nc v ge = 15 v v ce = 300 v i c = 17 a t d(on) ? 30 ? ns t r ? 15 ? ns t d(off) ? 80 ? ns switching time t f ? 80 ? ns v cc = 300 v, v ge = 15 v i c = 17 a rg = 5 ??? inductive load short circuit withstand time t sc 6 8 ? ? s tc = 100 ? c v cc ? 360 v, v ge = 15 v frd forward voltage v f ? 1.3 1.7 v i f = 17 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 17 a di f /dt = 100 a/ ? s notes: 3. pulse test.
RJH60M3DPE preliminary r07ds0533ej0100 rev.1.00 page 3 of 3 sep 02, 2011 package dimension 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 sc-83 1.30g mass[typ.] ldpak(s)-(1) / ldpak(s)-(1)v prss0004ae-b renesas code jeita package code previous code unit: mm package name ldpak(s)-(1) ordering information orderable part no. quantity shipping container RJH60M3DPE-00-j3 1000 pcs taping
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